gaas flip chip schottky barrier diodes m/a - com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without noti ce. m/a - com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose , nor does m/a - com assume any liability whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additional data sheets and product information. 1 ma4e1319 - 1, ma4e1319 - 2 v1 MA4E1317, ma4e1318, features low series resistance low capacitance high cutoff frequency silicon nitride passivation polyimide scratch protection de signed for easy circuit insertion description and applications m/a - com's MA4E1317 single, ma4e1318 anti - paralle l pair, ma4e1319 - 1 reverse tee and ma4e1319 - 2 series tee are gallium arsenide flip chip schottky ba r rier diodes. these devices are fabricated on omcvd epitaxial wafers using a process designed for high device uniformity and ext remely low parasitics. the diodes are fully passivated with silicon nitride and have an additional layer of polyimide for sc ratch protection. the protective coatings prevent damage to the junction during automated or manual handling. the flip chip configuration is suitable for pick and place insertion. the high cutoff frequency of these diodes allows use through millimet er wave frequencies. typical application s include single and double balanced mixers in pcn transceivers and radios, police radar detectors, and automotive radar detectors. the devices can be used through 80 ghz. the ma4e1318 anti - parallel pair is designe d for use in subharmonically pumped mixers. close matching of the diode characteristics results in high lo suppression at the rf input. MA4E1317 ma4e1318 ma4e1319 - 2 ma4e1319 - 1
gaas flip chip schottky barrier diodes m/a - com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without noti ce. m/a - com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose , nor does m/a - com assume any liability whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additional data sheets and product information. 2 ma4e1319 - 1, ma4e1319 - 2 v1 MA4E1317, ma4e1318, parameters and test conditions symbol units MA4E1317 ma4e1318 ma4e1319 - 1 or - 2 min typ max min typ max min typ max junction capacitance at 0v at 1 mhz cj pf .020 .020 3 .020 3 total capacitance at 0v at 1 mhz 1 ct pf .030 .045 .060 .030 3 .045 3 .060 3 .030 3 .045 3 .060 3 junction capacitance difference d cj pf .005 .010 .005 .010 series resistance at +10ma 2 rs ohms 4 7 4 7 4 7 forward voltage at +1ma vf1 volts .60 .70 .80 .60 .70 .80 .60 .70 .80 forward voltage difference at 1ma d vf volts .005 .010 .005 .010 reverse breakdown voltage at - 10ua vbr volts 4.5 7 4.5 7 ssb noise figure nf db 6.5 4 6.5 4 6.5 4 electrical specifications @ ta = 25 c absolute maximum ratings @ 25 c (unless otherwise noted) 1 1. operation of this device above any one of these parameters may cause permanent damage. parameter absolute maximum operating temperature - 65 c to +125 c storage temperature - 65 c to +150 c junction temperature +175 c incident lo power + 20 dbm incident rf power + 20 dbm mounting temperature +235 c for 10 seconds notes: 1. total capacitance is equivalent to the sum of junction capacitance cj and parasitic capacitance cp. 2. series resistance is determined by measuring the dynamic resistance and subtracting the junction resistance of 2.6 ohms. 3. capacitance for the ma4e131 8 and ma4e1319 - 1 or - 2 is per schottky diode. 4. measured at an lo frequency of 9.375 ghz, with an if frequency of 300 mhz. lo dr ive level is +6 dbm for a single schottky junction. the if noise figure contribution (1.5 db) is included. 0.00 0.01 0.10 1.00 10.00 100.00 0.20 0.30 0.40 0.50 0.60 0.70 0.80 0.90 1.00 forward voltage (v) forward current (ma) t=125 c t= - 50 c t=25 c forward current vs temperature
gaas flip chip schottky barrier diodes m/a - com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without noti ce. m/a - com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose , nor does m/a - com assume any liability whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additional data sheets and product information. 3 ma4e1319 - 1, ma4e1319 - 2 v1 MA4E1317, ma4e1318, mounting techniques these chips were designed to be inserted onto hard or soft substrates with the junction side down. they can be mounted with conductive epoxy or with a low temperature solder preform. the die can also be assembled with the junction side up, and wire or ribbon bonds made to the pads. solder die attach: solders with < 30% sn by volume or weight are recommended . 80 au / 20 sn and indalloy #2 solders are recommended. do not expose die to a temperature greater than 235 c, or greater th an 200 c for longer than 10 seconds. no more than three seconds of scrubbing should be required for attachment. conduct ive ep oxy die attach: assembly can be preheated to 125 - 150 c. use a controlled amount of epoxy approximately 2 mils thick. cure epo xy as per manufacturer?s schedule. for extended cure times, temperatures should be kept below 200 c. handling the following precautions should be observed to avoid damaging these chips: cleanliness: these chips should be handled in a clean environment. do not attempt to clean die after installation. static sensitivity: schottky barrier diodes are esd sensitive and can be damaged by static electricity. proper esd techniques should be used when handling these devices. genera l handling: the protective polymer coating on the active areas of these die provides scratch pr o tection, particularly for the metal airbridge which contacts the anode. die can be handled with tweezers or vacuum pickups and are suitable for use with automatic pick - and - place equipment.
gaas flip chip schottky barrier diodes m/a - com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without noti ce. m/a - com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose , nor does m/a - com assume any liability whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additional data sheets and product information. 4 ma4e1319 - 1, ma4e1319 - 2 v1 MA4E1317, ma4e1318, chip outline drawings MA4E1317 case style 1278 ma4e1318 case style 1197
gaas flip chip schottky barrier diodes m/a - com inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without noti ce. m/a - com makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose , nor does m/a - com assume any liability whatsoever arising out of the use or application of any product(s) or information. ? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macom.com for additional data sheets and product information. 5 ma4e1319 - 1, ma4e1319 - 2 v1 MA4E1317, ma4e1318, chip outline drawings ma4e1319 - 1 case style 1199 ma4e1319 - 2 case style 1200
|
